Wolfspeed / Cree CG2H40xx & CG2H30xx GaN HEMTs
Wolfspeed / Cree CG2H40xx and CG2H30xx GaN (Gallium Nitride) HEMTs are High Electron Mobility Transistors designed to operate from a 28V rail. The CG2H40xx and CG2H30xx Transistors offer a general purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities of these HEMTs make it ideal for linear and compressed amplifier circuits. The CG2H40xx and CG2H30xx transistors are available in a wide variety of package types for design flexibility, including screw down, solder down, pill, and flange packages. Typical applications include broadband amplifiers, cellular infrastructure, and radar.
Features
High EfficiencyHigh GainWide Bandwidth CapabilitiesRugged Design for Long, Reliable Operation
Specifications
Drain-Source Voltage (VDSS): 120V @ 25˚CGate-to-Source Voltage (VGS): -10V to +2VStorage Temperature (TSTG): -65˚C to +150˚COperating Junction Temperature (TJ): 225˚CCase Operating Temperature (TC): -40˚C to +150˚C
Applications
Broadband AmplifiersCellular InfrastructureRadarTest Instrumentation
Wolfspeed Newest
Wolfspeed E-Series AEC-Q101 Silicon Carbide Diodes are robust SiC semiconductor devices that are automotive qualified for Electric Vehicles (EV) and renewable energy markets.
Date: 2019-09-17Wolfspeed C3M0032120K Silicon Carbide Power MOSFETs are designed using C3M™ MOSFET Technology.
Date: 2019-08-09Wolfspeed CGD12HBXMP Dual Channel Differential Isolated Gate Driver evaluates the two-channel gate driver for the XM3 SiC half-bridge power modules.
Date: 2019-07-12Wolfspeed CGD12HB00D Differential Transceiver Companion Tool evaluates the two-channel gate driver for the XM3 SiC half bridge power modules.
Date: 2019-07-12Wolfspeed CAB450M12XM3 1200V 450A All-Silicon Carbide Half-Bridge Module maximizes power density while minimizing loop inductance and enabling simple power bussing.
Date: 2019-07-12Wolfspeed C3M0016120K Silicon Carbide Power MOSFET facilitates C3M™ MOSFET Technology in an optimized package.
Date: 2019-06-10Wolfspeed 6th Generation 650V C6D SiC Schottky Diodes demonstrate technological innovation and achieve highest system level efficiency in a PFC boost converter.
Date: 2019-05-29Wolfspeed / Cree CMPA5259050F MMICs are gallium nitride (GaN) High Electron Mobility Transistors (HEMT) based on monolithic microwave integrated circuit (MMIC) for radar power amplifiers.
Date: 2019-05-17
选择你的位置